STMicroelectronics STB60NE06-16
This Power Mosfet is the latest development of SGS-THOMSON unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STB60NE06-16 |
|---|---|
| Datasheet | STB60NE06-16 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATIONABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM (● ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor dV/dt( 1 ) T stg Tj Peak Diode Recovery voltage slope St orage Temperature Max. Operating Junction Temperature o o o INTERNAL SCHEMATIC DIAGRAM Value 60 60 ± 20 60 42 240 150 1 6 -65 to 175 175 (1) ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX Uni t V V V A A A W W/ o C V/ ns o o C C (●) Pulse width limited by safe operating area January 1998 1/9 STB60NE06-16 THERMAL DATA o o R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering P...
