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STB60NF06-1 - N-CHANNEL Power MOSFET

Download the STB60NF06-1 datasheet PDF. This datasheet also covers the STB60NF06 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application.

Key Features

  • Type STB60NF06-1 STB60NF06 VDSS 60V 60V RDS(on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STB60NF06_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by STMicroelectronics

Part Number Description
STB60NF06LT4 N-CHANNEL POWER MOSFET
STB60NF10 N-CHANNEL Power MOSFET
STB60NF10-1 N-CHANNEL Power MOSFET
STB60N55F3 N-channel Power MOSFET
STB6N60M2 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB60NF06 STB60NF06-1 N-channel 60V - 0.014Ω - 60A - D2PAK/I2PAK STripFET™ II Power MOSFET General features Type STB60NF06-1 STB60NF06 VDSS 60V 60V RDS(on) <0.016Ω <0.016Ω ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization ID 60A 60 Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.