STMicroelectronics STB65N045M9
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure.| Part No. | STB65N045M9 |
|---|---|
| Datasheet | STB65N045M9 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 650V 54A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STB65N045M9 VDS 650 V RDS(on) max. 45 mΩ ID 54 A● Very low FOM (RDS(on)●Qg)
● Higher dv/dt capability
● Excellent switching performance
● Easy to drive
● 100% avalanche tested Application G(1) S(3)
● Power supplies and converters
● Industrial motor control
● Home and professional appliances AM01475v1_noZen
DESCRIPTION
The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. Product status link STB65N045M9 Product summary Order code STB65N045M9 Marking 65N045M9 Package D²PAK Packing Tape and reel DS15004 - Rev 1 - June 2025 For further information, contact your local STMicroelectronics sales office. STB65N045M9 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC...
