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STB6LNC60 Datasheet PDF

STMicroelectronics STB6LNC60

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
Part No. STB6LNC60
Datasheet STB6LNC60 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL Power MOSFET
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STB6LNC60 datasheet page 1 preview

DESCRIPTION

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES s INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 5.8 3.65 23.2 100 0.8 3 –65 to 150 (1)ISD ≤5.8A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS , Tj ≤ TJMAX. Unit V V V A A A W W/°C V/ns °C (●)Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed October 2001 1/9 STB6LNC60 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-a...
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