Datasheet Details
| Part number | STB6NC80Z-1 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 442.23 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet |
 STB6NC80Z-1 Datasheet
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General Description
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
Key Features
- OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/13 STP6NC80Z.