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STB70NF03L Datasheet PDF

STMicroelectronics STB70NF03L

This application specific Power Mosfet is the third generation of STMicroelectronics unique “Single Feature Size ™” strip-based process. The resulting transistor shows the best trade-off between onresistance and gate charge.
Part No. STB70NF03L
Datasheet STB70NF03L Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET
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STB70NF03L datasheet page 1 preview

DESCRIPTION

When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

APPLICATIONS

s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 15 70 50 280 100 0.67 4 –65 to 175 175 (1) ISD ≤70A, di/dt ≤290A/µs, VDD =24 V ; Tj ≤ TJMAX. Unit V V V A A A W W/°C V/ns °C °C (q) Pulse width limited by safe operating area March 2001 1/...
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