STMicroelectronics STB75N15
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.| Part No. | STB75N15 |
|---|---|
| Datasheet | STB75N15 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
TYPE STP75N15 STB75N15T4 STW75N15 s s s s Figure 1: Package ID 75 A 75 A 75 A Pw 300 W 300 W 350 W 3 1 2 2 1 3 VDSS 150 V 150 V 150 V RDS(on) < 0.023 Ω < 0.023 Ω < 0.023 Ω s s TYPICAL RDS(on) = 20 mΩ GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY EXCELLENT FIGURE OF MERIT (RDS*Qg) 100% AVALANCHE TESTED TO-220 TO-247 3 1DESCRIPTION
D²PAK Figure 2: Internal Schematic DiagramAPPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s UPS Table 2: Order Codes SALES TYPE STP75N15 STB75N15T4 STW75N15 MARKING P75N15 B75N15 W75N15 PACKAGE TO-220 D²PAK TO-247 PACKAGING TUBE TAPE & REEL TUBE Rev. 1 November 2004 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. Free Datasheet 1/10 STP75N15 - STB75N15 - STW75N15 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k...
