STMicroelectronics STB7ANM60N
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STB7ANM60N |
|---|---|
| Datasheet | STB7ANM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 2 3 1 D 2 PAK TAB 3 1 DPAK Order codes VDS @ Tjmax RDS(on) max. ID STB7ANM60N STD7ANM60N 650 V 0.9 Ω 5A● Designed for automotive applications and AEC-Q101 qualified
● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance Figure 1. Internal schematic diagram ' Ć7$%
APPLICATIONS
● Switching applicationsDESCRIPTION
* 6 These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. $0 Y Order codes STB7ANM60N STD7ANM60N Table 1. Device summary Marking Packages 7ANM60N 2 D PAK DPAK Packaging Tape and reel December 2013 This is information on a product in full production. DocID023350 Rev 2 1/20 Contents Contents STB7ANM60N, STD7ANM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
