DESCRIPTION
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -6 I PAK (Tabless TO-220) 2 12 3 Value STP(B)7NC70Z(-1) 700 700 ± 25 6(*) 3.7(*) 24 40 0.32 ±50 3 3 2000 –65 to 150 150 (1)ISD ≤6A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS , Tj ≤ TJMAX (2).Limited only by maximum temper...
STMicroelectronics
