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STB7NC80Z Datasheet PDF

STMicroelectronics STB7NC80Z

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.
Part No. STB7NC80Z
Datasheet STB7NC80Z Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET
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STB7NC80Z datasheet page 1 preview

DESCRIPTION

Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s ORDERING INFORMATION SALES TYPE STP7NC80Z STP7NC80ZFP STB7NC80ZT4 STB7NC80Z-1 MARKING P7NC80Z P7NC80ZFP B7NC80Z B7NC80Z PACKAGE TO-220 TO-220FP D2PAK I2PAK PACKAGING TUBE TUBE TAPE & REEL TUBE May 2003 1/13 STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter STP7NC80Z STB7NC80Z STB7NC80Z-1 VDS VDGR VGS ID ID IDM ( ) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage...
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