STMicroelectronics STB80N20M5
The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.| Part No. | STB80N20M5 |
|---|---|
| Datasheet | STB80N20M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STB80N20M5 STP80N20M5●
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● VDSS @ TJmax 200 V RDS(on) max < 0.023 Ω ID 61 A 61 A 3 1 1 2 3 Amongst the best RDS(on) * area High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested D2PAK TO-220 Application Switching applications Figure 1. Internal schematic diagram
DESCRIPTION
$ ' 3 !- V Table 1. Device summary Marking 80N20M5 80N20M5 Package D2PAK TO-220 Packaging Tape and reel Tube Order codes STB80N20M5 STP80N20M5 July 2010 Doc ID 15734 Rev 2 1/14 14 Contents STB80N20M5, STP80N20M5 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
