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STB80NF55-06T - N-CHANNEL POWER MOSFET

General Description

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge.

Key Features

  • Type STB80NF55-06T VDSS 55 V RDS(on) max. 6.5 mΩ ID 80 A.
  • AEC-Q101 qualified.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB80NF55-06T Datasheet Automotive-grade N-channel 55 V, 5 mΩ typ., 80 A, STripFET™ II Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475v1_noZen Features Type STB80NF55-06T VDSS 55 V RDS(on) max. 6.5 mΩ ID 80 A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.