STB8NM60 Datasheet | STMicroelectronics

ures Type STD5NM60 STD5NM60-1 STB8NM60 STP8NM60 STP8NM60FP VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) <1Ω <1Ω <1Ω <1Ω <1Ω ID 5A 5A 5A 8A 8 A(1) Pw 96 W 96 W 100 W 100 W 30 W - 100% avalanche tested - HIgh dv/dt and avalanche capabilities - Low input capacitance and gate charge - Low gate input resistance Application - Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the pany’s Power MESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the pany’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar petition’s products. 3 1 DPAK 3 1 D²PAK 3 2 1 TO-220 3 2 TO-220F1P 3 2 1 IPAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes STD5NM60-1 STD5NM60T4 STB8NM60T4 STP8NM60 STP8NM60FP Marking D5NM60 D5NM60 B8NM60 P8NM60 P8NM60FP Package IPAK DPAK...