STB8NM60N
STB8NM60N is N-CHANNEL Power MOSFET manufactured by STMicroelectronics.
ures
Type
VDSS (@Tjmax)
RDS(on) max
STB8NM60N t(s)STD8NM60N c STD8NM60N-1 u STF8NM60N rod STP8NM60N
650 V 650 V 650 V 650 V 650 V
< 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω
7A 7A 7A 7 A(1) 7A
P1. Limited only by maximum temperature allowed te- 100% avalanche tested le- Low input capacitance and gate charge so- Low gate input resistance
Ob Application
) -- Switching applications ct(s Description du This series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the pany’s strip layout to leyield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most
Obsodemanding high efficiency converters.
3 2 1
TO-220
3 1
DPAK
3 2 1
IPAK
3 1
D²PAK
3 2 1
TO-220FP
Figure 1. Internal schematic diagram
$
' 3
!-V
Table 1. Device summary
Order codes
Marking
Package...
