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STB8NM60N - N-CHANNEL Power MOSFET

Datasheet Summary

Description

duThis series of devices implements second rogeneration MDmesh™ technology.

gate charge.

Features

  • Type VDSS (@Tjmax) RDS(on) max ID STB8NM60N t(s)STD8NM60N cSTD8NM60N-1 uSTF8NM60N rodSTP8NM60N 650 V 650 V 650 V 650 V 650 V < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω 7A 7A 7A 7 A(1) 7A P1. Limited only by maximum temperature allowed te.
  • 100% avalanche tested le.
  • Low input capacitance and gate charge so.
  • Low gate input resistance Ob.

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Datasheet Details

Part number STB8NM60N
Manufacturer STMicroelectronics
File Size 619.34 KB
Description N-CHANNEL Power MOSFET
Datasheet download datasheet STB8NM60N Datasheet
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Full PDF Text Transcription

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STx8NM60N N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS (@Tjmax) RDS(on) max ID STB8NM60N t(s)STD8NM60N cSTD8NM60N-1 uSTF8NM60N rodSTP8NM60N 650 V 650 V 650 V 650 V 650 V < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω 7A 7A 7A 7 A(1) 7A P1. Limited only by maximum temperature allowed te■ 100% avalanche tested le■ Low input capacitance and gate charge so■ Low gate input resistance ObApplication ) -■ Switching applications ct(sDescription duThis series of devices implements second rogeneration MDmesh™ technology. This Prevolutionary Power MOSFET associates a new tevertical structure to the Company’s strip layout to leyield one of the world’s lowest on-resistance and gate charge.
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