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STB8NM60N Datasheet N-CHANNEL Power MOSFET

Manufacturer: STMicroelectronics

General Description

duThis series of devices implements second rogeneration MDmesh™ technology.

This Prevolutionary Power MOSFET associates a new tevertical structure to the Company’s strip layout to leyield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most Obsodemanding high efficiency converters.

Overview

STx8NM60N N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK,.

Key Features

  • Type VDSS (@Tjmax) RDS(on) max ID STB8NM60N t(s)STD8NM60N cSTD8NM60N-1 uSTF8NM60N rodSTP8NM60N 650 V 650 V 650 V 650 V 650 V < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0.65 Ω 7A 7A 7A 7 A(1) 7A P1. Limited only by maximum temperature allowed te.
  • 100% avalanche tested le.
  • Low input capacitance and gate charge so.
  • Low gate input resistance Ob.