STB95NF03 Datasheet PDF

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID(∗) ID IDM(●) Ptot dv/dt (1) Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) w Gate- source Voltage Drain Current (continuous) at TC = 25°C w w Parameter .D t a S a e h INTERNAL SCHEMATIC DIAGRAM t e U 4 D2PAK TO-263 (Suffix “T4”) .c 3 1 m o Value 30 30 ± 20 80 80 320 150 1 3.0 720 -55 to 175 Unit V V V A A A W Drain Current (continuous) at TC = 100°C Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Jun...