STMicroelectronics STC08IE150HV
The STC08IE150HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies.| Part No. | STC08IE150HV |
|---|---|
| Datasheet | STC08IE150HV Download |
| Manufacturer |  STMicroelectronics |
| Description | Emitter Switched Bipolar Transistor |
| Buy | Stock & Price |
FEATURES
VCS(ON) 0.8 V● PRELIMINARY DATA IC 8A RCS(ON) 0.10 W High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Ω Very low turn-off cross over time In compliance with the 2002/93/EC European Directive
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● 1 23 4 TO247-4LHV
APPLICATIONS
●● Aux SMPS for three phase mains Sepic PFC Internal Schematic Diagram
DESCRIPTION
Order Codes Part Number STC08IE150HV Marking C08IE150HV Package TO247-4LHV Packaging TUBE December 2006 Rev 2 1/7 7 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1ABSOLUTE MAXIMUM RATINGS
STC08IE150HV 1 Table 1. Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratingsn Parameter Collector-source voltage (VBS = VGS = 0 V) Base-source voltage (IC = 0, VGS = 0 V) source-base voltage (ic = 0, vgs = 0...
