STMicroelectronics STD100N10LF7AG
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STD100N10LF7AG |
|---|---|
| Datasheet | STD100N10LF7AG Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD100N10LF7AG VDS 100 V RDS(on) max. 9 mΩ ID 80 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)● Designed for automotive applications and AEC-Q101 qualified
● Among the lowest RDS(on) on the market
● Excellent FoM (figure of merit)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STD100N10LF7AG AM01475v1_Tab Table 1: Device summary Marking Package 100N10LF7 DPAK Packing Tape and reel June 2016 DocID029501 Rev 1 This is information on a product in full production. 1/1
