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STD10NF10 Datasheet PDF

STMicroelectronics STD10NF10

N-CHANNEL POWER MOSFET

Part No. STD10NF10
Datasheet STD10NF10 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL POWER MOSFET
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STD10NF10 datasheet page 1 preview

DESCRIPTION

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM(●) Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 13 9 52 50 0.33 9 70 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C EAS (2) Tstg Tj (●) Pulse width limited by safe operating area.
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