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STD10NM50N - N-Channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type VDSS (@Tjmax) RDS(on) max ID STD10NM50N STF10NM50N STP10NM50N 550 V < 0.63 Ω 7 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD10NM50N STF10NM50N, STP10NM50N N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220 MDmesh™ II Power MOSFET Features Type VDSS (@Tjmax) RDS(on) max ID STD10NM50N STF10NM50N STP10NM50N 550 V < 0.63 Ω 7 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. TAB 3 1 DPAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1.