STMicroelectronics STD10NM50N
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.| Part No. | STD10NM50N |
|---|---|
| Datasheet | STD10NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS (@Tjmax) RDS(on) max ID STD10NM50N STF10NM50N STP10NM50N 550 V < 0.63 Ω 7 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
● Switching applicationsDESCRIPTION
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. TAB 3 1 DPAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' 3 !- V Table 1. Device summary Order codes STD10NM50N STF10NM50N STP10NM50N Marking 10NM50N Packages DPAK TO-220FP TO-220 Packaging Tape and reel Tube October 2011 Doc ID 16929 Rev 3 1/18 18 Contents Contents STD10NM50N, STF10NM50N, STP10NM50N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
