STD10P6F6 Datasheet | STMicroelectronics

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages - production data TAB 3 DPAK 3 2 1 TO-220FP 3 2 1 TO-220 IPAK 2 1 Figure 1. Internal schematic diagram , TAB Features Order codes STD10P6F6 STF10P6F6 STP10P6F6 STU10P6F6 VDS -60 V RDS(on) max 0.16 Ω - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss ID -10 A Applications - Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs...