Datasheet4U.com

STD10PF06 Datasheet PDF

STMicroelectronics STD10PF06

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Part No. STD10PF06
Datasheet STD10PF06 Download
Manufacturer
STMicroelectronics
Description P-CHANNEL POWER MOSFET
Buy Stock & Price
STD10PF06 datasheet page 1 preview

DESCRIPTION

APPLICATIONS

s MOTOR CONTROL s DC-DC & DC-AC CONVERTERS 3 2 1 IPAK TO-251 (Suffix “-1”) 3 1 DPAK TO-252 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM(●) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature (●) Pulse width limited by safe operating area. Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed March 2002 . Value Unit 60 V 60 V ± 20 V 10 A 7A 40 A 40 W 0.27 W/°C 6 V/ns -65 to 175 °C 175 °C (1) ISD ≤10A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/9 STD10PF06 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature...
STD10PF06 page 2 preview STD10PF06 page 3 preview