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STD11N50M2 - N-CHANNEL POWER MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology.

Key Features

  • Order code VDS @ TJmax RDS(on)max. STD11N50M2 STF11N50M2 550 V 0.53 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected ID 8A Package DPAK TO-220FP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD11N50M2, STF11N50M2 Datasheet N-channel 500 V, 0.45 Ω typ., 8 A MDmesh™ M2 Power MOSFETs in DPAK and TO-220FP packages TAB 3 2 1 DPAK 3 2 1 TO-220FP D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS @ TJmax RDS(on)max. STD11N50M2 STF11N50M2 550 V 0.53 Ω • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected ID 8A Package DPAK TO-220FP Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.