STMicroelectronics STD11N60DM2
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STD11N60DM2 |
|---|---|
| Datasheet | STD11N60DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 10A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS @ TJmax RDS(on)max. ID STD11N60DM2 650 V 420 mΩ 10 A● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected PTOT 110 W
APPLICATIONS
● Switching applicationsDESCRIPTION
Product status STD11N60DM2 Product summary Order code STD11N60DM2 Marking 11N60DM2 Package DPAK Packing Tape and reel DS11674 - Rev 3 - May 2023 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 10 A, di/dt=900 A/μs; VDS(peak) < V(BR)DSS,VDD = 400 V 3.
