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STD11NM50N - N-channel Power MOSFET

General Description

of MDmesh technology.

and gate charge.

Key Features

  • TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. STD11NM50N 500 V 470 mΩ.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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STD11NM50N Datasheet N-channel 500 V, 400 mΩ typ., 8.5 A MDmesh II Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. STD11NM50N 500 V 470 mΩ • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications ID 8.5 A • Switching applications G(1) Description S(3) This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical AM01475v1_noZen structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.