STMicroelectronics STD11NM65N
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical AM01475v1_noZen structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STD11NM65N |
|---|---|
| Datasheet | STD11NM65N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD11NM65N 650 V 455 mΩ 11 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
● Switching applications G(1)DESCRIPTION
S(3) It is therefore suitable for the most demanding high efficiency converters. Product status link STD11NM65N Product summary Order code STD11NM65N Marking 11NM65N Package DPAK Packing Tape and reel DS5257 - Rev 5 - May 2023 For further information contact your local STMicroelectronics sales office. STD11NM65N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt (2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
