STD120N4LF6 Datasheet | STMicroelectronics

STB120N4LF6 STD120N4LF6 N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STrip FET™ VI Deep GATE™ Power MOSFET Features Order codes STB120N4LF6 STD120N4LF6 VDSS 40 V 40 V RDS(on) max 4.0 mΩ 4.0 mΩ ID 80 A 80 A - Logic level drive - 100% avalanche tested Application - Switching applications - Automotive Description This product is a 40 V N-channel STrip FET™ VI Power MOSFET based on the ST’s proprietary STrip FET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK 3 1 D²PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes STB120N4LF6 STD120N4LF6 Marking 120N4LF6 Packages D²PAK DPAK Packaging Tape and reel February 2011 Doc ID 16919 Rev 2 1/18 .st. Contents Contents STB120N4LF6,...