STMicroelectronics STD12N10L
N-CHANNEL POWER MOSFET
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT(INJECTION, ABS, AIR-BG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM (● ) P tot T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor Storage T emperature Max. Operating Junction Temperature o o o Value 100 100 ± 15 12 8 48 50 0.33 -65 to 175 175 Unit V V V A A A W W /o C o o C C (●) Pulse width limited by safe operating area November 1999 1/9 STD12N10L THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature F or Soldering Purpose Max Max T yp 3...