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STD12NF06T4 - N-channel Power MOSFET

Download the STD12NF06T4 datasheet PDF. This datasheet also covers the STD12NF06 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Key Features

  • Order code VDS RDS(on) max. ID STD12NF06T4 60 V 0.1 Ω 12 A.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD12NF06_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STD12NF06 N-CHANNEL POWER MOSFET ST Microelectronics
STD12NF06L N-CHANNEL POWER MOSFET ST Microelectronics
STD12N05 N-CHANNEL POWER MOSFET ST Microelectronics
STD12N05L N-CHANNEL POWER MOSFET ST Microelectronics
STD12N06 N-CHANNEL POWER MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STD12NF06L-1 N-CHANNEL POWER MOSFET
STD12NF06LAG Automotive-grade N-channel Power MOSFET
STD12NF06LT4 N-CHANNEL POWER MOSFET
STD12N50DM2 N-CHANNEL POWER MOSFET
STD12N50M2 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD12NF06T4 Datasheet N-channel 60 V, 80 mΩ typ., 12 A, STripFET II Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order code VDS RDS(on) max. ID STD12NF06T4 60 V 0.1 Ω 12 A • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications PTOT 30 W G(1) S(3) AM01475v1_noZen Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.