STMicroelectronics STD12NM50ND
The resulting product has reduced onresistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required.| Part No. | STD12NM50ND |
|---|---|
| Datasheet | STD12NM50ND Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 Ω 11 A STD12NM50ND 550 V 0.38 Ω 11 A STF12NM50ND 550 V 0.38 Ω 11 A● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance Application
● Switching applications
DESCRIPTION
FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. 3 1 D2PAK 3 1 DPAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order codes Marking STB12NM50ND STD12NM50ND STF12NM50ND 12NM50ND 12NM50ND 12NM50ND 3 !- V Package D2PAK DPAK TO-220FP Packaging Tape and reel Tape and reel Tube June 2009 Doc ID 14936 Rev 2 1/16 16 Contents Contents STB12NM50ND, STD12NM50ND, STF12NM50ND 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
