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STD13003 Datasheet PDF

STMicroelectronics STD13003

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
Part No. STD13003
Datasheet STD13003 Download
Manufacturer
STMicroelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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STD13003 datasheet page 1 preview

APPLICATIONS

: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES s IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4")

DESCRIPTION

The device is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage o (I C = 0, I B = 0.75 A, tp < 10 µ s, T j < 150 C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 BV EBO 1.5 3 0.75 1.5 20 -65 to 150 150 Unit V V V A A A A W o C o C September 2001 1/8 STD13003 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100 o o C/W C/W

ELECTRICAL CHARACTERISTICS

(Tcase = 25 oC unless other...
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