STMicroelectronics STD130N4F6AG
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.| Part No. | STD130N4F6AG |
|---|---|
| Datasheet | STD130N4F6AG Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
7$% '3$. Order code STD130N4F6AG VDS 40 V RDS(on) max. 3.6 mΩ ID 80 A● Designed for automotive applications and AEC-Q101 qualified
● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss Figure 1. Internal schematic diagram ' 7$% *
APPLICATIONS
● Switching applicationsDESCRIPTION
6 $0 Y Order code STD130N4F6AG Table 1. Device summary Marking Package 130N4F6 DPAK Packaging Tape and reel February 2015 This is information on a product in full production. DocID027413 Rev 2 1/16 Contents Contents STD130N4F6AG 1 Electrical ratings . . . . .
