STD130N6F7 Datasheet | STMicroelectronics

N-channel 60 V, 4.2 mΩ typ., 80 A STrip FET™ F7 Power MOSFET in a DPAK package - production data Features Order code STD130N6F7 VDS 60 V RDS(on) max. 5.0 mΩ ID 80 A PTOT 134 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) - Among the lowest RDS(on) on the market - Excellent Fo M (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STD130N6F7 AM01475v1_Tab Table 1: Device summary Marking Package 130N6F7 DPAK Packing Tape and reel October 2016 Doc ID028788 Rev 2 This is information on a product in full...