STD13NM50N Datasheet | STMicroelectronics

N-channel 500 V, 0.285 Ω typ., 12 A MDmesh™ II Power MOSFET in a DPAK package 23 1 DPAK D(2, TAB) Features Order codes VDS RDS(on) max. 500 V 0.320 Ω - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Applications - Switching applications ID 12 A G(1) S(3) AM01475v1_noZen Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high...