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STD13NM50N - N-CHANNEL POWER MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order codes VDS RDS(on) max. STD13NM50N 500 V 0.320 Ω.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Datasheet preview – STD13NM50N

Datasheet Details

Part number STD13NM50N
Manufacturer STMicroelectronics
File Size 639.24 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STD13NM50N Datasheet
Additional preview pages of the STD13NM50N datasheet.

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Full PDF Text Transcription

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STD13NM50N Datasheet N-channel 500 V, 0.285 Ω typ., 12 A MDmesh™ II Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order codes VDS RDS(on) max. STD13NM50N 500 V 0.320 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications ID 12 A G(1) S(3) AM01475v1_noZen Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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