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STD140N6F7 - N-CHANNEL POWER MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STD140N6F7 VDS 60 V RDS(on) max. 3.8 mΩ ID 80 A PTOT 134 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3).
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Datasheet preview – STD140N6F7

Datasheet Details

Part number STD140N6F7
Manufacturer STMicroelectronics
File Size 529.68 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STD140N6F7 Datasheet
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Full PDF Text Transcription

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STD140N6F7 N-channel 60 V, 3.1 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code STD140N6F7 VDS 60 V RDS(on) max. 3.8 mΩ ID 80 A PTOT 134 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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