STD140N6F7 Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. AM01475v1_Tab Order code STD140N6F7 Table 1: Device summary Marking Package 140N6F7 DPAK Packing Tape and reel April 2016 DocID028801 Rev 2 This is information on a product in...
STD140N6F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness