STMicroelectronics STD140N6F7
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STD140N6F7 |
|---|---|
| Datasheet | STD140N6F7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 60V 80A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD140N6F7 VDS 60 V RDS(on) max. 3.8 mΩ ID 80 A PTOT 134 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)● Among the lowest RDS(on) on the market
● Excellent FoM (figure of merit)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
AM01475v1_Tab Order code STD140N6F7 Table 1: Device summary Marking Package 140N6F7 DPAK Packing Tape and reel April 2016 DocID028801 Rev 2 This is information on a product in full production. 1/13 Contents Contents STD140N6F7 1 Electrical ratings .............
