STD140N6F7 Datasheet | STMicroelectronics

N-channel 60 V, 3.1 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package - production data Features Order code STD140N6F7 VDS 60 V RDS(on) max. 3.8 mΩ ID 80 A PTOT 134 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) - Among the lowest RDS(on) on the market - Excellent FoM (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient...