STMicroelectronics STD14NM50N
This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.| Part No. | STD14NM50N |
|---|---|
| Datasheet | STD14NM50N Download |
| Manufacturer |  STMicroelectronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STB14NM50N STD14NM50N STF14NM50N STP14NM50N●
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● VDSS @ TJmax RDS(on) max ID 1 3 3 DPAK 550 V < 0.29 Ω 12 A 1 2 TO-220 100% avalanche tested Low input capacitances and gate charge 1 3 2 3 1 Low gate input resistance TO-220FP D2PAK Application
● Switching applications Figure 1. Internal schematic diagram
DESCRIPTION
$ ' 3 !- V Table 1. Device summary Marking Package D2PAK Tape and reel DPAK 14NM50N TO-220FP Tube TO-220 Packaging Order codes STB14NM50N STD14NM50N STF14NM50N STP14NM50N December 2009 Doc ID 16832 Rev 2 1/15 15 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits ..............................................
