STMicroelectronics STD14NM50NAG
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STD14NM50NAG |
|---|---|
| Datasheet | STD14NM50NAG Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD14NM50NAG VDS 500 V RDS(on) max. 0.320 Ω ID 12 A● AEC-Q101 qualified
● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
APPLICATIONS
G(1)● Switching applications S(3)
DESCRIPTION
AM01475v1_noZen It is therefore suitable for the most demanding high efficiency converters. Product status STD14NM50NAG Product summary Order code STD14NM50NAG Marking 14NM50N Package DPAK Packing Tape and reel DS12786 - Rev 2 - March 2019 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope Tj Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area.
