STMicroelectronics STD150NH02L
The STD150NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This novel 0.6µ process utilizes also unique metallization techniques that couple to a "bondless" assembly technique result in outstanding performance with standard DPAK outline. It is therefore ideal in high performance DC-DC converter applications where efficiency it to be achieved at very high out currents.| Part No. | STD150NH02L |
|---|---|
| Datasheet | STD150NH02L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAMAPPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTESABSOLUTE MAXIMUM RATINGS
Symbol Vspike(1) VDS VDGR VGS ID ID IDM(2) Ptot EAS (3) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 150 95 600 125 0.83 900 -55 to 175 Unit V V V V A A A W W/°C mJ °C September 2003 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/9 STD150NH02L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.2 100...
