STMicroelectronics STD15N50M2AG
This device is an N-channel Power MOSFET developed using MDmesh M2 technology.| Part No. | STD15N50M2AG |
|---|---|
| Datasheet | STD15N50M2AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel 500V 10A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD15N50M2AG VDS 500 V RDS(on) max. 380 mΩ ID 10 A● AEC-Q101 qualified
● Extremely low gate charge
● Excellent output capacitance (COSS) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STD15N50M2AG Product summary Order code STD15N50M2AG Marking 15N50M2 Package DPAK Packing Tape and reel DS10975 - Rev 3 - November 2023 For further information contact your local STMicroelectronics sales office. STD15N50M2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1.
