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STD15N50M2AG - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code VDS STD15N50M2AG 500 V RDS(on) max. 0.380 Ω ID PTOT 10 A 85 W.
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 Ω typ., 10 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STD15N50M2AG 500 V RDS(on) max. 0.380 Ω ID PTOT 10 A 85 W  Designed for automotive applications and AEC-Q101 qualified  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.