STMicroelectronics STD16N65M5
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.| Part No. | STD16N65M5 |
|---|---|
| Datasheet | STD16N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 23 1 DPAK D(2, TAB) Order codes VDS at Tjmax. RDS(on) max. ID STD16N65M5 710 V 279 mΩ 12 A● Extremely low RDS(on)
● Low gate charge and input capacitance
● Excellent switching performance
● 100% avalanche tested
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) AM01475v1_noZen Product status link STD16N65M5 Product summary Order code STD16N65M5 Marking 16N65M5 Package DPAK Packing Tape and reel DS7011 - Rev 4 - May 2023 For further information contact your local STMicroelectronics sales office. STD16N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope Tj Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 12 A, di/dt ≤ 400 A/μs, VDD = 400 V, VDS (peak) < V(BR)DSS.
