STMicroelectronics STD16NE10
This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.| Part No. | STD16NE10 |
|---|---|
| Datasheet | STD16NE10 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVERS,etc.) s DC-DC & DC-ACCONVERTERS s SYNCHRONOUS RECTIFICATIONABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM (● ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor dv/dt( 1 ) T stg Tj July 1998 Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM Value 100 100 ± 20 16 11 64 50 0.33 7 -65 to 175 175 ( 1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V A A A W W/ o C V/ ns o o C C 1/9 (●) Pulse width limited by safe operating area STD16NE10 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal...
