STD1703L Datasheet PDF

DESCRIPTION

This MOSFET is the latest development of STMi- croelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s DC-DC CONVERTERS s LINEAR POST REGULATION ORDERING INFORMATION SALES TYPE MARKING STD1703LT4 D1703L PACKAGE DPAK April 2004 PACKAGING TAPE & REEL 1/10 STD1703L

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Max. Operating Junction Temperature (q) Pulse wid...