STMicroelectronics STD18N55M5
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.| Part No. | STD18N55M5 |
|---|---|
| Datasheet | STD18N55M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 550V 16A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD18N55M5 600 V 192 mΩ 16 A● 100% avalanche tested
● Excellent switching performance
● Extremely low RDS(on)
● Low gate charge and input capacitance
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) AM01475v1_noZen Product status link STD18N55M5 Product summary Order code STD18N55M5 Marking 18N55M5 Package DPAK Packing Tape and reel DS6705 - Rev 7 - July 2025 For further information, contact your local STMicroelectronics sales office. STD18N55M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 16 A, di/dt ≤ 400 A/μs, VDS (peak) < V(BR)DSS, VDD = 340 V.
