STMicroelectronics STD18NF03L
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.| Part No. | STD18NF03L |
|---|---|
| Datasheet | STD18NF03L Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel 30V 17A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD18NF03L VDS 30 V RDS(on) max. < 50 mΩ ID 17 A● AEC-Q101 qualified
● Exceptional dv/dt capability
● 100% avalanche tested
● Low gate charge
APPLICATIONS
G(1)● Switching applications S(3)
DESCRIPTION
AM01475v1_noZen Product status link STD18NF03L Product summary Order code STD18NF03L Marking 18NF03L Package DPAK Packing Tape and reel DS5403 - Rev 2 - April 2020 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0 V) VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Derating Factor dv/dt(2). Peak diode recovery avalanche energy EAS(3) Single pulse avalanche energy Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 17 A, di/dt ≤ 300 A/μs, VDD = V(BR)DSS, TJ ≤ TJ max.
