STMicroelectronics STD18NF25
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.| Part No. | STD18NF25 |
|---|---|
| Datasheet | STD18NF25 Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 23 1 DPAK D(2, TAB) Order code STD18NF25 VDS 250 V RDS(on) max. 165 mΩ ID 17 A● AEC-Q101 qualified
● Exceptional dv/dt capability
● 100% avalanche tested
● Low gate charge
APPLICATIONS
G(1)● Switching applications S(3)
DESCRIPTION
AM01475v1_noZen Product status link STD18NF25 Product summary Order code STD18NF25 Marking 18NF25 Package DPAK Packing Tape and reel DS6601 - Rev 6 - July 2023 For further information contact your local STMicroelectronics sales office. STD18NF25 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope TJ Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 17 A, di/dt ≤ 200 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
