STD19NE06 Datasheet PDF

DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM(●) Ptot EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 19 13.5 76 70 0.46 1.45 -55 to 175 (1) Starting T j = 25 oC, ID = 30A, VDD = 30 V Unit V V V A A A W W/°C mJ °C (●) Pulse width limited by safe operating area March 2002 .