STMicroelectronics STD1HNC60
N-CHANNEL POWER MOSFET
| Part No. | STD1HNC60 |
|---|---|
| Datasheet | STD1HNC60 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s DPAK TO-252 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 2 1.3 8 50 0.4 3.5 –65 to 150 150 (1)ISD ≤ 2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX Unit V...
