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STD1LNC60 Datasheet PDF

STMicroelectronics STD1LNC60

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Part No. STD1LNC60
Datasheet STD1LNC60 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL POWER MOSFET
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STD1LNC60 datasheet page 1 preview

DESCRIPTION

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s BATTER CHARGER, ADAPTOR AND STANDBY POWER SUPPLY s DPAK TO-252 INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q ) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ± 30 1 0.63 4 30 0.24 3.5 –65 to 150 150 (1)ISD ≤ 1A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX Unit V V V A A A W W/°C V/ns °C °C (●)Pulse width limited by safe operating area February 2001 1/9 STD1LNC60 THERMAL DATA Rthj-case Rthj-amb Rthj-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance case-sink Typ Maximum Lead Temperat...
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