STD1NB80-1 Datasheet PDF | STMicroelectronics

STMicroelectronics STD1NB80-1

The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Part No.	STD1NB80-1
Datasheet	STD1NB80-1 Download
Manufacturer	STMicroelectronics
Description	N-CHANNEL POWER MOSFET
Buy	Stock & Price

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

APPLICATIONS

SWITCH MODE POWER SUPPLIES (SMPS) s AC ADAPTORS AND BATTERY CHARGERS FOR HANDHELD EQUIPMENT s IPAK TO-251 (Suffix "-1") INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V DS V DGR V GS ID ID I DM (● ) P tot dv/dt( 1 ) Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 800 800 ± 30 1 0.63 4 50 0.4 4.5 -65 to 150 150 ( 1) ISD ≤ 1Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/5 (●) Pulse width limited by safe operating area September 1998 STD1NB80-1 THERMAL...