STD1NK60-1 Datasheet | STMicroelectronics

N-channel 600 V, 7.3 Ω typ., 1 A SuperMESH™ Power MOSFET in an IPAK package - production data Features Order code RDS(on) max. ID PTOT STD1NK60-1 600 V 8.5 Ω 1 A 30 W IPAK 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) - Extremely high dv/dt capability - ESD improved capability - 100% avalanche tested - Gate charge minimized Applications - Low power battery chargers - Swith mode low power supplies (SMPS) - Low power, ballast, CFL (pact fluorescent lamps) Description This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established...