STMicroelectronics STD1NK60-1
This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.| Part No. | STD1NK60-1 |
|---|---|
| Datasheet | STD1NK60-1 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Order code VDS RDS(on) max. ID PTOT STD1NK60-1 600 V 8.5 Ω 1 A 30 W IPAK 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)● Extremely high dv/dt capability
● ESD improved capability
● 100% avalanche tested
● Gate charge minimized
APPLICATIONS
● Low power battery chargers● Swith mode low power supplies (SMPS)
● Low power, ballast, CFL (compact fluorescent lamps)
DESCRIPTION
In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Order code STD1NK60-1 AM01475v1_noZen Table 1: Device summary Marking Package D1NK60 IPAK Packing Tube February 2017 DocID030308 Rev 1 This is information on a product in full production. 1/15 Contents Contents STD1NK60-1 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)......................................................
