STMicroelectronics STD1NK60T4
This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.| Part No. | STD1NK60T4 |
|---|---|
| Datasheet | STD1NK60T4 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STD1NK60T4 VDS 600 V RDS(on) max. 8.5 Ω ID PTOT 1 A 30 W Figure 1: Internal schematic diagram D(2, TAB)● Extremely high dv/dt capability
● ESD improved capability
● 100% avalanche tested
● Gate charge minimized
APPLICATIONS
● Low power battery chargers● Swith mode low power supplies (SMPS)
● Low power, ballast, CFL (compact fluorescent lamps) G(1) S(3) Order code STD1NK60T4 AM01475v1_noZen
DESCRIPTION
In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1: Device summary Marking Package Packing D1NK60 DPAK Tape and reel February 2017 DocID030307 Rev 1 This is information on a product in full production. 1/19 Contents Contents STD1NK60T4 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)......................................................
